[sdiy] BS170, low leakage
Czech Martin
Martin.Czech at Micronas.com
Tue Jan 28 16:24:25 CET 2003
I included them into my list of possibly usefull devices.
Possible advantage: thick gate oxide allows for NO ESD
protection, thus very low gate-source leakage.
This could be different in an IC solution.
Second advantage: you have all three terminals s g d (bulk
however tied to s, which is sometimes not so good)
and you don't have to worry about chip substrate leakage/latch up
etc. Just an almost ideal DMOST, all terminals floating.
m.c.
-----Original Message-----
From: Ian Fritz [mailto:ijfritz at earthlink.net]
Sent: Dienstag, 28. Januar 2003 16:11
To: Czech Martin; synth-diy at dropmix.xs4all.nl
Subject: RE: [sdiy] BS170, low leakage
At 07:29 AM 1/28/2003, Czech Martin wrote:
>The datasheet says: input : 24pF, output 17pF.
>I think that this is not too excessive.
I just checked my stash and found that I had bought some of these a few
years ago. Was someone else also recommending them? What would their
advantage be over the better IC switches?
Ian
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