Austin Franklin wrote: > I do have questions on the diagrams they show in that > referenced link. I am > NOT a physicist...but I am an engineer with varying degrees. > They show on > the top, that blue filter blocks green and red, and green > filter blocks red > and blue etc. > > Well, on the bottom, they show blue passes green and red, and > green passes > red only. How does that work? > Hmmm, maybe here's how . . .the gory details are in the 1998 patent #5,965,875 "It is well known that the greater the wavelength of light incident upon a silicon substrate, the deeper the light will penetrate into the silicon before it is absorbed. FIG. 5 shows light absorption length in silicon for light in the visible spectrum. As indicated in FIG. 5, blue light, having a wavelength of 400-490 nm, will be absorbed in a silicon substrate primarily at a depth of about 0.2-0.5 microns. Green light, having a wavelength of 490-575 nm, will be absorbed in the silicon substrate at a depth of about 0.5-1.5 microns. Red light, having a wavelength of 575-700 nm, will be absorbed in the silicon at a depth of about 1.5-3.0 microns. Taking advantage of these differences in absorption depth in silicon of light of different wavelength, as shown in FIG. 6, a preferred embodiment of the present invention provides a triple-well color photosensor structure formed in a silicon substrate 100 of P-type conductivity (approx. 10.sup.15 atoms/cm.sup.2). The color photosensor structure includes a deep N-type doped well region 102 (approx. 10.sup.16 atoms/cm.sup.2) formed in the P-type silicon substrate 100. The junction depth of the N-doped region 102 is between about 1.5-3.0 microns, and preferably about 2 microns, i.e. the approximate absorption depth of red light. Thus, the pn junction between the deep N-doped region 102 and the P-type substrate 100 forms a red-sensitive photodiode between the two regions."
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RE: [Digital BW] Foveon/X3/Sygma (OT, sorry)
2002-02-12 by Garcia, William
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