Graham Davies wrote: > --- In AVR-Chat@yahoogroups.com, Robert Adsett <subscriptions@...> wrote: >> The diode is inevitable in >> the MOSFET structure isn't it? > > No, I don't think so. Diodes between both source and drain and the substrate are usual, but you can get rid of those too if you don't want them (in the extreme case, using silicon-on-insulator technology). Hmm, I hadn't considered SOI. > I've no idea how this works with individual MOSFETs, which tend to have very complicated structure these days. I would absolutely not make any assumptions that are not backed up by the manufacturer's data sheet. I've never seen any without a parasitic diode. Usually characterised to some extent. Recently all the power MOSFETs I've seen have the parasitic diodes rated to the same current and power capabilities as the MOSFET proper. Robert -- http://www.aeolusdevelopment.com/ From the Divided by a Common Language File (Edited to protect the guilty) ME - "I'd like to get Price and delivery for connector Part # XXXXX" Dist./Rep - "$X.XX Lead time 37 days" ME - "Anything we can do about lead time? 37 days seems a bit high." Dist./Rep - "that is the lead time given because our stock is live.... we currently have stock."
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Re: [AVR-Chat] Re: Voltage level translation
2009-04-10 by Robert Adsett
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